News Academy of Engineering Sciences A.M. Prokhorov Annotation << Back Buried laser diode emitting at 1310 nm working in the microwave oven range M.G. Vasil’ev A.M. Vasil’ev A.A. Shelyakin A.D. Izotov the technology of producing of laser diodes emitting in the spectral range 1310–1550 nm with the mesa stripe buried channel in p-InP substrate was considered in this research. The nanoheterostructures of InP/GaInAsP were grown by liquid phase epitaxy (LPE) method. Their structural perfection was investigated. The design of the mesa stripe buried channel diode using the semi-isolating A2B6 compound allows to create the laser diodes working at length of a wave of 1310 nanometers with a speed of transfer of a telecommunication signal to 5,5 GHz. Key words: Materials of optoelectronics, nanoheterostructures, laser diodes. Contacts: E-mail: mgvas@igic.ras.ru Pp. 19-26.