News Academy of Engineering Sciences A.M. Prokhorov Annotation << Back A bout possssibility of developing of based on SiC and microbolometers assssembled integral matrix IR and UV photodetector A.A. Altukhov A.Yu. Mityagin N.Kh. Talipov V.S. Feshchenko V.A. Shepelev The possibility of developing of planar multipixel matrix integrated with silicon readout integral circuit (ROIC) SiC-based UV photodetector is considered. The low-temperature technology of deposition of SiC layers on Si substrate with method of vacuum laser ablation is offered to apply for formatting of photosensitive elements on silicon plate with fabricated ROIC. The planar photosensitive elements of matrix are produced as photoresistors, witch are placed on depositing on Si plate insulator, and connected by deposited metallic electrodes to ROIC via windows in insulator. This technology may be also realized for creation of based on SiC and microbolometers matrix assembled IR and UV photodetector, that will allow to adapt their production in silicon factories directly. Key words: silicon carbide, microbolometer, matrix photodetector, multispector photodetector. Contacts: Е-mail: UAI-Co@yandex.ru Pp. 82-86.