News Academy of Engineering Sciences A.M. Prokhorov Annotation << Back IR lasers of semiconductors AIIBVI AIIIBV with Co2+ ions D.M. Kustov A.V. Bundyuk E.O. Goncharov I.S. Kurchatov Obtaining Co ion energy structure in semiconductor materials AIIBVI AIIIBV solved in two stages: calculating of the energy levels values of the free ion, and then solve the subproblem of calculating changes of the energy structure of the ion when it is in the field of environment ligands material a certain symmetry. Energy structure Co2+ ZnS, ZnSe, CdTe, GaP, ZnO, CdS and the ratio of these structures with bandgap related materials are given. The possibility of obtaining laser action on these materials due to the fact that the molecular structure of these ions have infrared luminescence and lasing in the transparency of optical fibers 1.5–3 microns is evaluated. Keywords: semiconductor lasers, ions of the iron group, the energy structure, the intensity of transitions. Contacts: E-mail: phobos9999@gmail.com Pp. 49-52.