News Academy of Engineering Sciences A.M. Prokhorov Annotation << Back PREPARATION AND PROPERTIES OF THE MANGANOUS SOLID SOLUTIONS IN1–XGAXSB O.N. PASHKOVA, A.D. IZOTOV, V.P. SANYGIN Solid solutions In1–хGaхSb doped with manganese are obtained under non-equilibrium conditions of synthesis.It was found that compositions In0,95Ga0,05Sb and In0,05Ga0,95Sb are characterized by the formation of homogeneous solid solutions with implanted magnetic manganese clusters.The clusters are located at the lattice defects – grain boundaries and dislocations.The density of clusters in the peripheral regions of ingots is signifi cantly greater than in the central regions. According to studies of the magnetic properties it was found by calculation that the eff ective size of the magnetic clusters is of the order of 180 to 300 nm. The obtained material can be used in the creation of fundamentally new magnetic semiconductors, in which magnetic memory cells are linearly extended dislocations, doped d-elements. Keywords: magnetic semiconductors, solid solutions of semiconductors, ferromagnets, spintronics. Contacts: E-mail: olg-pashkova@yandex.ru, E-mail: izotov@igic.ras.ru, E-mail: sanygin@igic.ras.ru Pp. 35-39.